CS6N70A8D mosfet equivalent, silicon n-channel power mosfet.
l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data:21nC) l Low Reverse transfer capacitances(Typical:5pF) l 100% Single Pulse avalanche energy Te.
Power switch circuit of adaptor and charger.
Absolute（Tc= 25℃ unless otherwise specified）：
Symbol Parameter
VDSS
ID
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CS6N70 A8D, the silicon N-channel Enhanced VDMOSFETs, is
obtained by the self-aligned planar Technology which reduce the
conduction loss, improve switching performance and enhance the
avalanche energy. The transistor can be used in various power.
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